Saving more parameters of MOSFET during transient simulation

Hi all.

I am using IC6.1.8-64b.500.10.

For DC sweeps I can enlarge list of saved parameters for specific MOSFET by creating .scs file and adding it to definition files.

Content of mentioned .scs file may be:

save M0:all

Where M0 is specific MOSFET instance to save parameters for.

Is it possible to do something similar for transient analysis?

Best regards,

Dragan